Przemyslaw Jozwik, Cyprian Mieszczynski, Renata Ratajczak, Andrzej Turos
Abstract
Ion channeling and backscattering techniques are powerful tools for studying crystal lattice disorders and defect structures in crystalline materials. However, the accurate interpretation of channeling phenomena necessitates the utilization of simulation models that account for the intricate interactions between point defects, dislocations, and extended defect clusters. The present paper introduces a Monte Carlo method that reproduces experimental spectra over a wide range of analyzing beam energies and enables quantitative identification of defect types and distributions. The simulations reveal characteristic energy dependencies that distinguish point defects from extended defects, offering a novel perspective on disturbances caused, for example, by ion implantation in metals and semiconductors. To this end, the McChasy code has been developed as a flexible and accessible tool for scientists, enabling the modeling of various crystal systems, including complex semiconductors, multilayer epitaxial films, and oxide crystals. The program's integration of experimental data on ion channeling with defect modeling establishes a robust framework for defect analysis in materials science. The present article expounds upon the simulation capabilities of the program by reproducing the characteristic "elbows" in channeling spectra that were previously observed in experiments conducted on Cu crystals.