Shuhui Liu, Riccardo Tomasello, Bin Fang, Aitian Chen, Like Zhang, Zhenhao Liu, Rui Hu, Wenkui Lin +5
Abstract
The development of compact and highly sensitive microwave detectors compatible with complementary-metal-oxide-semiconductor (CMOS) processes is an active research area but remains a major challenge in microwave technology. Spin-torque diodes (STDs) are emerging nanoscale spintronic devices capable of surpassing the theoretical thermodynamic sensitivity limits of Schottky diodes. However, their practical use in compact systems is limited by the need of external antennas or probes. Here, we demonstrate a magnetoelectric (ME) spin-torque microwave detector that monolithically integrates an ME antenna with a magnetic tunnel junction (MTJ). The device directly converts wireless electromagnetic signals into a DC output at sub-microwatt power levels, achieving a sensitivity greater than 90 kV/W, a noise equivalent power of 3 pW*Hz^-0.5, and a compact footprint of 0.4 mm^2. This performance is due to the nonlinear coupling between incoherent magnetization dynamics, driven by a DC current in the MTJ, and the combined effects of the microwave voltage and strain generated by the ME antenna under incident electromagnetic waves. We further show that this design is scalable, enabling the co-integration of an ME antenna with an array of MTJs. A detector incorporating four MTJs, for example, exhibits a sensitivity exceeding 400 kV/W. This work paves the way for a new generation of highly sensitive, compact and scalable microwave detectors that combine ME antennas and spintronic diodes.