Akane Samizo, Makoto Minohara, Naoto Kikuchi, Kyoko K. Bando, Yoshihiro Aiura, Ko Mibu, Keishi Nishio
Abstract
Divalent tin oxides have attracted considerable attention as novel p-type oxide semiconductors, which are essential for realizing future oxide electronic devices. Recently, p-type Sn2Nb2O7 and SnNb2O6 were developed; however, enhanced hole mobility by reducing defect concentrations is required for practical use. In this work, we investigate the correlation between the formation of oxygen vacancy which may reduce the hole-generation efficiency and hole mobility, and the crystal structure in Sn-Nb complex oxides. Extended X-ray absorption fine structure spectroscopy and Rietveld analysis of x-ray diffraction revealed the preferential formation of oxygen vacancy at the O site bonded to the Sn ions in both the tin niobates. Moreover, a large amount of oxygen vacancy around the Sn ions were found in the p-type Sn2Nb2O7, thereby indicating the effect of oxygen vacancy to the low hole-generation efficiency. The dependence of the formation of oxygen vacancy on the crystal structure can be elucidated from the Sn-O bond strength that is evaluated based on the bond valence sum and Debye temperature. The differences in the bond strengths of the two Sn-Nb complex oxides are correlated through the steric hindrance of Sn2+ with asymmetric electron density distribution. This suggests the importance of the material design with a focus on the local structure around the Sn ions to prevent the formation of oxygen vacancy in p-type Sn2+ oxides.