1509.00070Aug 31, 20154 pages. Memory Workshop (IMW), 2015 IEEE International

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

B. L. Ji, H. Li, Q. Ye, S. Gausepohl, S. Deora, D. Veksler, S. Vivekanand, H. Chong +10

Emerging Technologies Materials Science Data Analysis, Statistics and Probability

Abstract

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.

Briefing

What this paper is actually doing

Sign in and connect a model key to generate a briefing for this paper.

Socratic margin

Ask the abstract

Questions are grounded in the title and abstract. If the PDF is required, arXivDesk will say so.

Sign in to ask questions about this paper.