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Large conductance modulation of gold thin films by huge charge injection via electrochemical gating · arXivDesk

1108.3099Aug 15, 20115 pages, 5 figures, RevTeX

Large conductance modulation of gold thin films by huge charge injection via electrochemical gating

D. Daghero, F. Paolucci, A. Sola, M. Tortello, G. A. Ummarino, R. S. Gonnelli, Jijeesh R. Nair, C. Gerbaldi

Mesoscale and Nanoscale Physics Superconductivity

Abstract

By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n₂D as high as 3.5 × 10¹5 e/cm² in gold films and to observe large relative variations in the film resistance, DeltaR/R', up to 10% at low temperature. DeltaR/R' is a linear function of n₂D - as expected within a free-electron model - if the film is thick enough (> 25 nm), otherwise a tendency to saturation due to size effects is observed. The application of this technique to 2D materials will allow extending the field-effect experiments to a range of charge doping where giant conductance modulations and, in some cases, even the occurrence of superconductivity are expected.

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Researchers working in cond-mat.mes-hall and adjacent areas.

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The paper addresses: Large conductance modulation of gold thin films by huge charge injection via electrochemical gating.
By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n₂D as high as 3.5 × 10¹5 e/cm² in gold films and to observe large relative variations in the film resistance, DeltaR/R', up to 10% at low temperature.